가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STB5NK50ZT4 | 0 | 2K | 3h | ||||||||
| Farnell | STB5NK50ZT4 | 0 | 1 | 1d | ||||||||
| Component Stockers USA | STB5NK50ZT4 | 476 | 15h | |||||||||
| Win Source | WS-STB5NK50ZT4 | 433 | 40 | 2h | ||||||||
| Worldway Electronics | STB5NK50ZT4 | 28,455 | 7 | Tape & Reel | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
관련 부품
onsemiNTB75N03RG
Tube Surface Mount N-Channel Single Mosfet Transistor 9.7A Ta 75A Tc 75A 74.4W 18.4ns
설명
유통업체에서 제공한 STMicroelectronics STB5NK50ZT4에 대한 설명입니다.
Mosfet Transistor, N Channel, 4.4 A, 500 V, 1.22 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in D2PAK package
Transistor MOSFET N-CH 500V 4.4A 3-Pin (2+Tab) D2PAK T/R
MOSFET, N CH, 500V, 4.4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.4 A
Current Rating4.4 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance535 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max1.5 Ω
Rise Time10 ns
Threshold Voltage3.75 V
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)500 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm