공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-01-28
Lifecycle StatusEOL (Last Updated: 3 months ago)
LTB Date2026-09-10
LTD Date2027-03-10
관련 부품
InfineonIPB65R280C6
MOSFET N-CH 650V 13.8A D2PAK N-Channel 650 V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3
STMicroelectronicsSTB13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
InfineonIPB60R380P6ATMA1
MOSFET N-CH 600V 10.6A D2PAK N-Channel 600 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO263-3
InfineonIPB65R225C7ATMA1
MOSFET N-CH 650V 11A D2PAK / N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO263-3
설명
유통업체에서 제공한 STMicroelectronics STB18N60DM2에 대한 설명입니다.
N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
N-Channel 600 V 0.295 Ohm Surface Mount DM2 Power Mosfet - D2PAK
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh DM2series, Vds=600 V, 12 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)25 V
Input Capacitance800 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Manufacturer Package IdentifierD2PAK-0079457
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max295 mΩ
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time9.5 ns
Turn-On Delay Time13.5 ns
Dimensions
Height4.83 mm