관련 부품
InfineonIPB600N25N3GATMA1
MOSFET N-CH 250V 25A D2PAK N-Channel 250 V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-3
InfineonIPB17N25S3100ATMA1
Power MOSFET, N Channel, 250 V, 17 A, 100 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
설명
유통업체에서 제공한 STMicroelectronics STAC3932B에 대한 설명입니다.
900W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package
STAC3932B N-CHANNEL RF MOSFET TRANSISTOR, 20 A, 250 V, 4-PIN STAC244B
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOSFET,N CH,RF,580W,250MHZ,STAC244B; Drain Source Voltage Vds: 250V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 625W; Operating Frequency Min: -; Operating Frequency Max: 250MHz; RF Transistor Case: STAC244B; No.
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Body MaterialCeramic
MountScrew, Surface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Frequency123 MHz
Gain24.6 dB
Gate to Source Voltage (Vgs)20 V
Input Capacitance492 pF
Max Frequency250 MHz
Max Operating Temperature200 °C
Max Output Power900 W
Max Power Dissipation625 W
Min Breakdown Voltage250 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage100 V
Output Power450 W
Power Gain24.6 dB
Test Current250 mA
Test Voltage100 V
Voltage Rating250 V
Dimensions
Height5.33 mm
Length34.04 mm
Width9.78 mm