대체 부품
Price @ 1000
$ 0.896
Stock
140,476
160,089
Authorized Distributors
0
1
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
600 V
600 V
Max Collector Current
7 A
7 A
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
4.5
4.5
Power Dissipation
36 W
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-11-28
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2009-08-30
LTD Date2010-03-02
설명
유통업체에서 제공한 STMicroelectronics ST8812FP에 대한 설명입니다.
Power Bipolar Transistor, 7A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Power Transistor
High voltage fast-switching NPN power transistor
7 A 600 V NPN Si POWER TRANSISTOR TO-220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Collector Base Voltage (VCBO)1.15 kV
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Current Rating7 A
Emitter Base Voltage (VEBO)15 V
hFE Min4.5
Max Collector Current7 A
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation36 W
Voltage Rating (DC)600 V