STMicroelectronics D45H11

Bipolar (BJT) Single Transistor, PNP, 80 V, 10 A, 60 W, TO-220, Through Hole

D45H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220

TRANSISTOR, BIPOLAR, SI, PNP, AMPLIFIER, POWER, VCEO -80V, IC -10A, PD 50W, TO-220

TRANS PNP 80V 10A TO-220 / Trans GP BJT PNP 80V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube

80V 50W 40@4A,1V 10A PNP TO-220 Bipolar Transistors - BJT ROHS

COMPLEMENTARY SILICON POWER TRANSISTOR Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Power Bipolar, PNP, 1V, 400mA, TO-220, Tube

10 A 80 V PNP Si POWER TRANSISTOR TO-220AB

Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:120hFE; MSL:- RoHS Compliant: Yes

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 50 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5