대체 부품
Price @ 1000
$ 0.056
$ 0.054
$ 0.054
Stock
31,251,061
215,786,121
215,786,121
Authorized Distributors
2
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
200 mA
115 mA
115 mA
Threshold Voltage
2.1 V
1 V
1 V
Rds On Max
5 Ω
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
18 V
20 V
20 V
Power Dissipation
350 mW
225 mW
225 mW
Input Capacitance
43 pF
50 pF
50 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-06
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2012-05-15
LTD Date2012-11-15
설명
유통업체에서 제공한 STMicroelectronics 2N7002에 대한 설명입니다.
STMICROELECTRONICS 2N7002 MOSFET Transistor, N Channel, 180 mA, 60 V, 1.8 ohm, 10 V, 2.1 V
N-channel 60 V, 1.8 Ohm typ., 0.35 A STripFET(TM) II Power MOSFET in a SOT-23 package
POWER MOSFET, N-CH, VDSS 60V, RDS(ON) 1.8OHMS, ID 0.2A, SOT-23-3L, PD 0.35W, VGS+/-18V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.2A; On Resistance, Rds(on):5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-23-3L ;RoHS Compliant: Yes
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and Relaible. High saturation current capability.
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.3 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)18 V
Input Capacitance43 pF
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max5 Ω
Rise Time15 ns
Threshold Voltage2.1 V
Turn-Off Delay Time7 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)60 V
Dimensions
Height1.2 mm
Length3.03 mm
Width3.05 mm