공급망
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-30
LTD Date2021-03-30
설명
유통업체에서 제공한 Sharp GP1S58VJ000F에 대한 설명입니다.
Photointerrupter Transmissive 5mm Phototransistor 4-Pin
PHOTO INTERRUPTER, TRANSMISSIVE, 5MM; Sensor Output: Phototransistor; Sensor Mounting: Through Hole; Gap Width: 5mm; Aperture Width: 0.5mm; Forward Current If: 50mA; Reverse Voltage Vr: 6V; Forward Voltage: 1.2V; Product Range:
PHOTOINTERRUPTER; No. of Channels:1; Output Type:Transistor; Input Current:50mA; Voltage, Output Max:35V; Case Style:Slotted Switch; Operating Temperature Range:-25°C to +85°C; Collector-to-Emitter Breakdown Voltage:35V; Current Ic ;RoHS Compliant: Yes
PHOTOINTERRUPTER; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:35V; Opto Case Style:Through Hole; No. of Pins:4; Collector Emitter Voltage V(br)ceo:35V; Continuous Collector Current Ic Max:15mA; Current Ic Typ:20mA; External Depth:5.2mm; External Length / Height:10mm; External Width:13.7mm; Fall Time tf:20µs; Forward Voltage VF Max:1.4V; Gap Width:5mm; Operating Temperature Range:-25°C to +85°C; Output Type:Phototransistor; Peak Forward Current:50mA; Power Dissipation Pd:150mW; Power Dissipation Pd:150mW; Reverse Leakage Current Max:10.0µA; Rise Time:15µs; Voltage Vf Typ:1.25V
제조업체 별칭
Sharp에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Sharp는 다음 이름으로도 알려져 있습니다:
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
기술 사양
Physical
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time20 µs
Forward Current50 mA
Forward Voltage1.2 V
Input Current20 mA
Max Collector Current20 mA
Max Operating Temperature85 °C
Min Operating Temperature-25 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Current20 mA
Output Voltage35 V
PackagingBulk
Response Time4 µs
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Rise Time15 µs
Sensing Distance5.0038 mm
Dimensions
Height12 mm
Length13.7 mm