Technical
Ambient Temperature Range High85 °C
Collector Emitter Breakdown Voltage70 V
Collector Emitter Voltage (VCEO)70 V
Dark Current100 nA
Fall Time10 µs
Forward Current60 mA
Forward Voltage1.25 V
Input Current60 mA
Max Collector Current100 mA
Max Junction Temperature (Tj)100 °C
Max Operating Temperature85 °C
Max Power Dissipation250 mW
Min Operating Temperature-25 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output TypePhototransistor
Output Voltage70 V
Power Dissipation250 mW
Response Time10 µs
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Rise Time15 µs
Schedule B8541406050
Sensing Distance2.794 mm
Voltage Rating (DC)1.25 V
Wavelength950 nm