IGBT, MODULE, N-CH, 1.7KV, 830A; Transistor Polarity: N Channel; DC Collector Current: 830A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.7kV; Transistor Cas
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives mains 575 - 750 V AC Public transport (auxiliary syst.) Wind power