유통업체에서 제공한 Infineon FS150R12PT4BOSA1에 대한 설명입니다.
Infineon FS150R12PT4BOSA1 IGBT Module, 200 A 1200 V Module, Panel Mount
Trans IGBT Module N-CH 1.2KV 200A 20-pin ECONO4-1
INFINEON FS150R12PT4 IGBT Array & Module Transistor, N Channel, 150 A, 1.75 V, 680 W, 1.2 kV, Module
1200 V, 150 A sixpack IGBT Module, AG-ECONO4-1, RoHS
Infineon SCT
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
IGBT, POW, QUAD W NTC, 1200V, 150A
EconoPACK™ 4 1200 V, 150 A sixpack IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology
IGBT-Sixpack 1200V 200A ECONO4
680KW 1.75V 2.15V@ 15V,150A 200A 130mm*103mm*17mm
Infineon LOW POWER ECONO FS150R12PT4BOSA
INSULATED GATE BIPOLAR TRANSISTO
Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes |Infineon FS150R12PT4