IGBT MODULE, DUAL N CH, 1.2KV, 200A; Transistor Polarity: Dual N Channel; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 3.3V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
Features: N channel , homogeneous Si Low inductance case Short tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (13 mm) and creepage distance (20 mm) Typical Applications: Switched mode power supplies at f sw > 20 kHz Resonant inverters up to 100 kHz Inductive heating Electronic welders at f sw > 20 kHz