IGBT MODULE, DUAL N CH, 1.2KV, 160A; Transistor Polarity: Dual N Channel; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
Features: IGBT4 = 4. Generation (Trench)IGBT VCEsat with positive temperaturecoefficient High short circuit capability, selflimiting to 6 x I CNOM Soft switching 4. Generation CALdiode (CAL4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders