Infineon FD150R12RT4HOSA1

INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150 A, 1.75 V, 790 W, 1.2 kV

Trans IGBT Module N-CH 1200V 150A 790W 5-Pin 34MM-1 Tray

Transistor IGBT Module N-CH 1200V 150A ±20V Screw Tray

Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

IGBT Module, 1.2KV, 150A, MODULE

IGBT MOD 1200V 150A 790W / IGBT Module Trench Field Stop Single Chopper 1200 V 150 A 790 W Chassis Mount Module

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

IGBT, MED POW, FD CHO, 1200V, 125A

Our well-known 34 mm 1200V chopper IGBT modules with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

IGBT, MED POW, FD CHO, 1200V, 125A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:5; SVHC:No SVHC (19-Dec-2011); Module Configuration:Single; Power Dissipation Max:790W