공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-25
Lifecycle StatusObsolete (Last Updated: 9 months ago)
관련 부품
설명
유통업체에서 제공한 Infineon FD150R12RT4HOSA1에 대한 설명입니다.
INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150 A, 1.75 V, 790 W, 1.2 kV
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 8.3pF 50volts C0G +/-0.25pF
Our well-known 34 mm 1200V chopper IGBT modules with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
IGBT, MED POW, FD CHO, 1200V, 125A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:5; SVHC:No SVHC (19-Dec-2011); Module Configuration:Single; Power Dissipation Max:790W
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- Infineon Technologies
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- INFINEON TECH
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
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기술 사양
Physical
Case/PackageModule
MountScrew
Number of Pins5
Number of Terminals4
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Max Collector Current150 A
Max Operating Temperature175 °C
Max Power Dissipation790 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity10
Power Dissipation790 W
Schedule B8541290080
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책