공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-15
Lifecycle StatusObsolete (Last Updated: 4 weeks ago)
설명
유통업체에서 제공한 Panasonic 2SJ652에 대한 설명입니다.
General-Purpose Switching Device Applications | MOSFET P-CH 60V 28A TO-220ML
P-Channel Power MOSFET, -60V, -28A, 38mΩ, TO-220F-3SG
MOSFET, P-CH, -60V, 28A, 28.5MOHM@10V, TO-220ML
Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P CH 60V 28A TO220ML; Transistor Type:Switching; On State Resistance:38mohm; Power Dissipation:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220ML; Case Style:TO-220ML; Cont Current Id:28A; Termination Type:Through Hole; Transistor Polarity:P; Typ Voltage Vds:60V; Typ Voltage Vgs th:2.6V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Panasonic에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Panasonic는 다음 이름으로도 알려져 있습니다:
- PAN
- Panasonic Electronic Components
- PANASONI
- Panasonic Electric Works
- PANASON
- PANA
- PANAS
- PANASO
- PANSONIC
- Panasonic Industrial Automation Sales
- PANASONIC INDUSTRIAL
- Panasonic Industrial Devices
- PANASONIC BATTERIES
- PANASONIC CORPORATION
- PANASOINC
- PANASONIC CORP
- PANISONIC
- PANOSONIC
- MATSUSHITA PANASONIC
- PANASONC
- PANASOIC
- AROMAT CORP
- PEW
- PANASONIC/MATSUSHITA
- PANS
- Panasonic Industrial Devices
- Panasonic Corporation of North America
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance55.5 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time180 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.36 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Rds On Max38 mΩ
Rise Time210 ns
Turn-Off Delay Time310 ns
Turn-On Delay Time33 ns