공급망
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-10-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi 2SJ652-1E에 대한 설명입니다.
Power Field-Effect Transistor, 28A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 60V 28A 3-Pin(3+Tab) TO-220F Magazine
Power MOSFET, P-Channel, -60V, -28A, 38mΩ
MOSFET, P-CH, -60V, -28A, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: -28A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0285ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance28.5 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time180 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.36 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rds On Max38 mΩ
Rise Time210 ns
Turn-Off Delay Time310 ns
Turn-On Delay Time33 ns
Dimensions
Height19.5 mm