공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-26
Lifecycle StatusNRND (Last Updated: 1 week ago)
관련 부품
InfineonBSS606NH6327XTSA1
On a Reel of 1000, N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 Infineon BSS606NH6327XTSA1
onsemiPCP1402-TD-H
ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
InfineonBSS225H6327FTSA1
Trans MOSFET N-CH 600V 0.09A Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
InfineonBSS192PH6327FTSA1
Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89
설명
유통업체에서 제공한 ROHM RJP020N06T100에 대한 설명입니다.
N-CHannel 60 V 300 mO 500 mW Surface Mount Power Mosfet - MPT-3
MOSFET,N CH,60V,2A,SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.165ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 2A; Voltage Vgs Max: 12V
Mosfet,n Channel,60V,2A,sot-89; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2A; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):165Mohm; Tensión Vgs De Medición Rds(On):4.5V; Núm. De Contactos:3 |Rohm RJP020N06T100
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2 A
Current Rating2.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance160 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage60 V
Nominal Vgs4.5 V
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max240 mΩ
Resistance300 MΩ
Rise Time18 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V