가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMN3A01ZTA | 515 | 5 | Cut Tape | ||||||||
| Arrow Electronics | ZXMN3A01ZTA | 1 | 1 | |||||||||
| DigiKey | ZXMN3A01ZTADICT-ND | 659 | 1 | Cut Tape | ||||||||
| Avnet | ZXMN3A01ZTA | 0 | 1K | 3d | ||||||||
| Future Electronics | ZXMN3A01ZTA | 0 | 1K | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonBSS225H6327FTSA1
Trans MOSFET N-CH 600V 0.09A Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
InfineonBSS606NH6327XTSA1
On a Reel of 1000, N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 Infineon BSS606NH6327XTSA1
InfineonBSS192PH6327FTSA1
Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89
InfineonBSS87H6327FTSA1
In a Pack of 100, N-Channel MOSFET, 260 mA, 240 V, 3-Pin SOT-89 Infineon BSS87H6327XTSA1
설명
유통업체에서 제공한 Diodes Inc. ZXMN3A01ZTA에 대한 설명입니다.
Trans MOSFET N-CH 30V 3.3A Automotive 4-Pin(3+Tab) SOT-89 T/R
N-Channel 30 V 120 mOhm SMT Enhancement Mode Mosfet - SOT-89
Mosfet, N-Ch, 30V, 3.3A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZXMN3A01ZTA
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
DiodesZetex NMOS, Vds=30 V, 3.3 A, SOT-89, , 3
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Terminals3
Weight130.492855 mg
Technical
Continuous Drain Current (ID)3.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance186 pF
Max Operating Temperature150 °C
Max Power Dissipation970 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time4.1 ns
Schedule B8541290080
Turn-Off Delay Time13.5 ns
Turn-On Delay Time2.6 ns