가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | BC858BT116 | 3,000 | 200 | |||||||||
| Arrow Electronics | BC858BT116 | 5,310 | 1 | |||||||||
| Farnell | BC858BT116 | 0 | 3K | Custom Reel | 1d | |||||||
| Win Source | WS-BC858B T116 | 1,450 | 50 | 15h | ||||||||
| Worldway Electronics | BC858BT116 | 7,090 | 7 | Tape & Reel | 14h |
대체 부품
이 부품
대체 부품
Price @ 1000
$ 0.085
$ 0.041
Stock
89,982
411,381
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
SOT-323
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
100 mA
100 mA
Transition Frequency
250 MHz
250 MHz
Collector Emitter Saturation Voltage
300 mV
-600 mV
hFE Min
210
210
Power Dissipation
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
PanasonicDRA2L14Y0L
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA
Toshiba2SA1182-Y,LF
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
설명
유통업체에서 제공한 ROHM BC858BT116에 대한 설명입니다.
Trans GP BJT PNP 30V 0.1A 350mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
650mV@ 5mA,100mA PNP 350mW -5V 100nA -30V 30V 100mA SST-3 2.9mm*1.3mm*950¦Ìm
TRANS PNP 30V 0.1A SST3
TRANS GP PNP 40V 0.2A 3-PI
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageTO-236-3
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current-100 mA
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product250 MHz
hFE Min210
Max Breakdown Voltage30 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityPNP
Transition Frequency250 MHz
Voltage Rating (DC)-30 V