가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 2SK3065T100CT-ND | 8,774 | 1 | Cut Tape | ||||||||
| TME | 2SK3065T100 | 0 | 1 | 17h | ||||||||
| Newark | 2SK3065T100 | 0 | 1 | Cut Tape | ||||||||
| TTI | 2SK3065T100 | 0 | 1K | Tape & Reel | 2d | |||||||
| Future Electronics | 2SK3065T100 | 0 | 1K | Tape & Reel |
관련 부품
InfineonBSS606NH6327XTSA1
On a Reel of 1000, N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 Infineon BSS606NH6327XTSA1
InfineonBSS225H6327FTSA1
Trans MOSFET N-CH 600V 0.09A Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
InfineonBSS192PH6327FTSA1
Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89
onsemiPCP1402-TD-H
ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
설명
유통업체에서 제공한 ROHM 2SK3065T100에 대한 설명입니다.
Single N-Channel 500 mW 60 V 0.45 Ohm Surface Mount MosFet - SC-62
MOSFET,N CH,60V,2A,SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.25ohm; Rds(on) T; Available until stocks are exhausted Alternative available
Mosfet, N Channel, 60V, 2A, Sot-89-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2A; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):250Mohm; Tensión Vgs De Medición Rds(On):4V |Rohm 2SK3065T100
제조업체 별칭
ROHM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. ROHM는 다음 이름으로도 알려져 있습니다:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance160 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max320 mΩ
Resistance450 mΩ
Rise Time50 ns
Threshold Voltage800 mV
Turn-Off Delay Time120 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V