공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-02-28
LTD Date2015-08-31
관련 부품
InfineonIRG4BC30FD-SPBF
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
onsemiSGW23N60UFDTM
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
onsemiFGB20N6S2D
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB
설명
유통업체에서 제공한 Rochester Electronics SKB15N60E8151에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 31A 139W 3-Pin(2+Tab) D2PAK T/R
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Compliant Surface Mount 4.5 mm Tape & Reel (TR) TO-263-3 139 W 32 ns 234 ns
IGBT NPT 600V 31A 139W TO263-3
SKB15N60 INSULATED GATE BIPOLAR TRANSIS;
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current31 A
Element ConfigurationSingle
Max Collector Current31 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation139 W
Reverse Recovery Time279 ns
Turn-Off Delay Time234 ns
Turn-On Delay Time32 ns
Dimensions
Height4.5 mm