공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-17
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2010-05-31
LTD Date2010-11-30
관련 부품
InfineonIRFB7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
onsemiNDPL100N10BG
MOSFET N-CH 100V 100A TO220 / Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube
설명
유통업체에서 제공한 Rochester Electronics IPP08CNE8NG에 대한 설명입니다.
Trans MOSFET N-CH 85V 95A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 95A I(D), 85V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
167W(Tc) 20V 4V@ 130µA 99nC@ 10 V 1individualNChannel 85V 6.4mΩ@ 95A,10V 95A 6.69nF@40V TO-220 Through hole mounting 10mm*4.4mm*15.65mm
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)95 A
Current Rating95 A
Drain to Source Breakdown Voltage85 V
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)85 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.69 nF
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage85 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Rds On Max6.4 mΩ
Rise Time24 ns
Turn-Off Delay Time26 ns
Voltage Rating (DC)85 V