공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIPB083N10N3GATMA1
Power MOSFET, N Channel, 100 V, 80 A, 0.0072 ohm, TO-263 (D2PAK), Surface Mount
InfineonIPB090N06N3GATMA1
71W(Tc) 20V 4V@ 34¦ÌA 36nC@ 10 V 1N 60V 9m¦¸@ 50A,10V 50A 2.9nF@30V TO-263 10.31mm*4.57mm
설명
유통업체에서 제공한 Rochester Electronics IPB097N08N3GATMA1에 대한 설명입니다.
Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 80V 70A TO263-3
IPB097N08 OPTLMOS N-CHANNEL POWER MOSFET;
Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)70 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance9.7 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation136 W
Rise Time46 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time16 ns
Dimensions
Height4.5 mm