공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
관련 부품
InfineonBSP322P L6327
MOSFET, P-CH, 100V, 1A, SOT-223; Transistor Polarity:P Channel; Continuous Drain
InfineonBSP317PL6327
MOSFET, P-CH, 250V, 430MA, SOT-223; Transistor Polarity:P Channel; Continuous Dr
설명
유통업체에서 제공한 Rochester Electronics BSP321PL6327에 대한 설명입니다.
0.98 A 100 V 0.9 ohm P-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 0.98A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP321 SIPS SMALL-SIGNAL P-CHANNEL;
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageSOT-223-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)980 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance319 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max900 mΩ
Rise Time4.4 ns
Turn-Off Delay Time16.5 ns
Turn-On Delay Time5.9 ns