공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Rochester Electronics BSC883N03MSG에 대한 설명입니다.
Trans MOSFET N-CH 30V 19A 8-Pin TDSON EP
19 A 34 V 0.0046 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC883N03 POWER FIELD-EFFECT TRANSISTOR;
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance28 pF
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage34 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max500 Ω
Rise Time7.6 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time15 ns