대체 부품
Price @ 1000
$ 0.04
$ 0.07
$ 0.07
Stock
17,496
858,458
858,458
Authorized Distributors
4
6
6
Mount
-
Through Hole
Through Hole
Case/Package
-
TO-92
TO-92
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
-
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
200 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
750 mV
750 mV
750 mV
hFE Min
40
40
40
Power Dissipation
-
625 mW
625 mW
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-12-31
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Diodes Inc. 2N4401에 대한 설명입니다.
Trans GP BJT NPN 40V 0.6A 600mW 3-Pin TO-92
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
Transistor, Power Rating - 0.6W, Polarity - NPN, DC Collector/Base Gain hfe Min - 20, DC Current Gain hFE Max - 300
Small Signal Bipolar Transistor
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Saturation Voltage750 mV
Collector Emitter Voltage (VCEO)40 V
hFE Min40
Max Collector Current600 mA
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Number of Elements1
PolarityNPN
Schedule B8541210080
Transition Frequency200 MHz