공급망
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
OptekOPB830W55Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
OptekOPB840W51Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
설명
유통업체에서 제공한 Optek OPB840W55Z에 대한 설명입니다.
880nm Through-Beam 3.18mm 20ms Phototransistor 30V wire mounting，base mount 16.13mm(height)
OPB840W Series 30 V 880 nm 50 mA Phototransistor Slotted Optical Switch
Optical Switches, Transmissive, Phototransistor Output Slotted Opt Switch
SENSOR, SLOTTED OPTICAL SWITCH, 3,18MM SLOT, 2V EMITTER, 30V DETECTOR, 880NM
Transistor Output Slotted Switch, 1-Channel, 3.18mm Slot Width
Photointerrupter Transmissive 3.18mm Phototransistor 4-Pin Bag
SENSOR OPT SLOT PHOTOTRANS MODUL / Optical Sensor Through-Beam 0.125" (3.18mm) Phototransistor Module, Pre-Wired
PHOTO INTERRUPTERS - TRANSMISSIVE;
SENSOR OPT SLOT PHOTOTRANS MODUL
PHOTO INTERRUPTER, THROUGH BEAM, 3.18MM; Sensing Method:Through Beam; Sensing Distance / Slot Width:3.18mm; Supply Voltage Min:-; Supply Voltage Max:-; Sensor Case / Package:Module; Collector Emitter Voltage Max:30V; IP
Optoswitch, Phototransistor; Sensor Output:Fototransistor; Corriente Directa If:50Ma; Tensión Directa:1.7V; Tensión Inversa Vr:2V; Anchura De Apertura:1.27Mm; Anchura Del Espacio/Hueco:3.18Mm; Sensor, Montaje:Panel/Chassis |Tt Electronics / Optek Technology OPB840W55Z
제조업체 별칭
Optek에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Optek는 다음 이름으로도 알려져 있습니다:
- OPTEK TECHNOLOGY
- TT Electronics/Optek Technology
- OPTEK TECHNOLOGY INC
- OPT
- OPTE
- OPTEK TECH
- OPTEC
- OPTK
- Optek / TT Electronics
- Optek Technology/TT Electronics
- TT Electronics - Optek
- TT Optek
- OPTEK TEC
- OPTEK Technologies
- C- OPTEK
- OPTEK TECHNOLOG
- C-OPTEKTECH
- OPTEK MIL
- OPTEK TECH INC
- Kyocera Optrex
- BEDFORD OPTO TECHNOLOGY LTD
- OPTEK INC
기술 사양
Physical
MountChassis Mount, Screw
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Forward Voltage1.7 V
Input Current20 mA
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature80 °C
Min Operating Temperature-40 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Voltage30 V
PackagingBulk
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Reverse Voltage (DC)2 V
Sensing Distance3.175 mm
Wavelength880 nm