공급망
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 2 months ago)
관련 부품
OptekOPB831W55Z
880nm Through-Beam 3.18mm 10ms Phototransistor wire mounting，base mount 16.13mm(height)
OptekOPB830W55Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
OptekOPB842W51Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 23.75mm*12.95mm*10.54mm
설명
유통업체에서 제공한 Optek OPB840W51Z에 대한 설명입니다.
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
OPB840W Series 30 V 880 nm 50 mA Phototransistor Slotted Optical Switch
Optical Sensor (Switch) Transmissive/S; |Tt Electronics / Optek Technology OPB840W51Z
Optical Switches, Transmissive, Phototransistor Output Slotted Opt Switch
SENSOR, SLOTTED OPTICAL SWITCH, 3.18MM SLOT, 2V EMITTER, 30V DETECTOR, 30 MA
3.18 mm SLOT WIDTH 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
Photointerrupter Transmissive 3.18mm Phototransistor 4-Pin Bag
Optek OPB840W51Z 透過形フォトマイクロセンサ
SENSOR OPT SLOT PHOTOTRANS MODUL
PHOTO INTERRUPTER, THROUGH BEAM, 3.18MM; Sensor Output: Phototransistor; Sensor Mounting: Panel / Chassis; Gap Width: 3.18mm; Aperture Width: 1.27mm; Forward Current If: 50mA; Reverse Voltage Vr: 2V; Forward Voltage: 1.7V; Prod
제조업체 별칭
Optek에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Optek는 다음 이름으로도 알려져 있습니다:
- OPTEK TECHNOLOGY
- TT Electronics/Optek Technology
- OPTEK TECHNOLOGY INC
- OPT
- OPTE
- OPTEK TECH
- OPTEC
- OPTK
- Optek / TT Electronics
- Optek Technology/TT Electronics
- TT Electronics - Optek
- TT Optek
- OPTEK TEC
- OPTEK Technologies
- C- OPTEK
- OPTEK TECHNOLOG
- C-OPTEKTECH
- OPTEK MIL
- OPTEK TECH INC
- Kyocera Optrex
- BEDFORD OPTO TECHNOLOGY LTD
- OPTEK INC
기술 사양
Physical
MaterialPlastic
MountChassis Mount, Screw
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Forward Voltage1.7 V
Input Current20 mA
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature80 °C
Min Operating Temperature-40 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Voltage30 V
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Reverse Voltage (DC)2 V
Schedule B8541408000
Sensing Distance3.175 mm
TouchscreenInfrared (IR)
Wavelength880 nm
Dimensions
Height10.54 mm
Length23.75 mm