onsemi PZT2907AT1G

Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 1.5 W, SOT-223, Surface Mount

TRANSISTOR, BIPOLAR, SI, PNP, SWITCHING, VCEO -60VDC, IC -600MA, PD 1.5W, SOT-223

Trans GP BJT PNP 60V 0.6A 1500mW 4-Pin(3+Tab) SOT-223 T/R

60V 1.5W 100@150mA,10V 600mA PNP SOT-223-4 Bipolar Transistors - BJT ROHS

General Purpose Transistors PNP Ic=600mA Vceo=60V hfe=100~300 P=1.5W SOT223

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Bipolar Transistor, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:600Ma; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:200Mhzrohs Compliant: Yes |Onsemi PZT2907AT1G.

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 300 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 200 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2.6 / Reflow Temperature Max. °C = 260