대체 부품
Price @ 1000
$ 0.074
$ 0.055
$ 0.055
Stock
485,549
835,171
835,171
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
TO-92-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
-60 V
-60 V
Max Collector Current
800 mA
800 mA
800 mA
Transition Frequency
200 MHz
200 MHz
200 MHz
Collector Emitter Saturation Voltage
-400 mV
-1.6 V
-1.6 V
hFE Min
50
50
50
Power Dissipation
625 mW
625 mW
625 mW
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiPN2907ATFR
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
설명
유통업체에서 제공한 onsemi PN2907ATA에 대한 설명입니다.
Bipolar (BJT) Single Transistor, PNP, 60 V, 800 mA, 625 mW, TO-226AA, Through Hole
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 10V 20nA ICBO 625mW 200MHz
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Fan-Fold
TO-92-3L Bipolar Transistors - BJT ROHS
General Purpose Transistor PNP Silicon
TRANSISTOR, BIPOL, PNP, -60V, TO-226AA-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 625mW; DC Collector Current: -800mA; DC Current Gain hFE: 50h
The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating-800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min50
Max Breakdown Voltage60 V
Max Collector Current800 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency200 MHz
Voltage Rating (DC)-60 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책