가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 31AC1109 | 1,500 | 1500 | 2d | ||||||||
| Newark | NVMFS5C404NLWFAFT1G | 641 | 1 | Cut Tape | ||||||||
| DigiKey | NVMFS5C404NLWFAFT1GOSCT-ND | 1,906 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | NVMFS5C404NLWFAFT1G | 0 | 375 | Bulk | ||||||||
| Master Electronics | NVMFS5C404NLWFAFT1G | 0 | 375 |
대체 부품
Price @ 1000
$ 5.016
$ 3.336
$ 3.336
Stock
128,076
3,055,836
3,055,836
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
-
DFN
DFN
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
370 A
352 A
352 A
Threshold Voltage
-
-
-
Rds On Max
-
750 µΩ
750 µΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.9 W
3.9 W
3.9 W
Input Capacitance
-
12.168 nF
12.168 nF
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NVMFS5C404NLWFAFT1G에 대한 설명입니다.
Single N-Channel Power MOSFET 40V, 378A, 0.7mΩ TrenchFet 40V N-ch Trench 6 HEFET WF
Trans MOSFET N-CH 40V 52A 5-Pin SO-FL EP T/R Automotive AEC-Q101
Power Field-Effect Transistor, 370A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemi NMOS NVMFS5C404NL, Vds=40 V, 370 A, DFN, , 4 + Tab
MOS Power Transistors LV (=< 40V)
T6 40V HEFET ROHS COMPLIANT: YES
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Terminals5
Technical
Continuous Drain Current (ID)370 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.9 W
Turn-Off Delay Time87 ns
Turn-On Delay Time24 ns
Dimensions
Height1.15 mm