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Price @ 1000
$ 0.169
$ 0.112
Stock
11,279,397
674,091
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-563
SOT-563
Drain to Source Voltage (Vds)
20 V
20 V
Continuous Drain Current (ID)
540 mA
540 mA
Threshold Voltage
1 V
-
Rds On Max
550 mΩ
550 mΩ
Gate to Source Voltage (Vgs)
6 V
6 V
Power Dissipation
250 mW
250 mW
Input Capacitance
150 pF
150 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiNTZD3154NT1G
NTZD3154N: Small Signal MOSFET 20V 540mA 550 mOhm Dual N-Channel SOT-563 with ESD Protection
설명
유통업체에서 제공한 onsemi NTZD3155CT1G에 대한 설명입니다.
Complementary Small Signal MOSFET with ESD protection 20V
Dual N & P-Channel 20 V 0.4/0.5 mOhm 250 mW Small Signal MOSFET - SOT-563
Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N/P Channel, 20V, 0.54A, Sot-563-6; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:540Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTZD3155CT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-563
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)540 mA
Current Rating540 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)6 V
Input Capacitance150 pF
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation250 mW
Rds On Max550 mΩ
Resistance500 mΩ
Rise Time12 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time10 ns
Dimensions
Height600 µm
Length1.7 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책