공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-10-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
Diodes Inc.DMN6040SK3-13
N-Channel 60 V 40 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
Diodes Inc.ZXMN6A25KTC
ZXMN6A25K Series N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - TO-252-3
onsemiHUFA76419D3S
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 20A DPAK
설명
유통업체에서 제공한 onsemi NTTFS5116PLTAG에 대한 설명입니다.
P-Channel 60 V 52 mOhm 3.2 W Surface Mount Power MOSFET - WDFN-8
Single P-Channel Power MOSFET -60V, -20A, 52mΩ
onsemi PChannel EnhancedMOSTube, Vds=60 V, 20 A, WDFNencapsulation, surface mount, 8Pin
P-CHANNEL MOSFET TRANSISTOR 20 A 60 V 8-PIN WDFN
MOSFET P-CH 60V 5.7A 8-WDFN / Power MOSFET 60 V, 20 A, 52m
5.7 A 60 V 0.072 ohm P-CHANNEL Si POWER MOSFET
Trans MOSFET P-CH 60V 5.7A 8-Pin WDFN EP T/R
Power Field-Effect Transistor, 5.7A I(D), 60V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
TRAN MOSFET P NTTFS5116PL WDFN 8
MOSFET, P-CH, -60V, -5.7A, WDFN-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance52 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.258 nF
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation40 W
Rds On Max52 mΩ
Resistance52 MΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Dimensions
Height750 µm
Length3.15 mm
Width3.15 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책