가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN6040SK3-13 | 2,036 | 1 | Cut Tape | ||||||||
| TME | DMN6040SK3-13 | 325 | 1 | 21h | ||||||||
| Future Electronics | DMN6040SK3-13 | 0 | 2500 | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | DMN6040SK3-13 | 0 | 10 | Bulk | 1d | |||||||
| Avnet | DMN6040SK3-13 | 0 | 2500 | 2d |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPD25N06S4L30ATMA2
Mosfet, N-Ch, 60V, 25A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD25N06S4L30ATMA2
Diodes Inc.DMP6180SK3-13
P-Channel 60 V 110 mO Surface Mount Enhancement Mode Mosfet -TO-252-3 (DPAK)
Diodes Inc.DMPH6050SK3Q-13
P-Channel 60 V 50 mOhm Surface Mount Enhancement Mode Mosfet - TO-252
설명
유통업체에서 제공한 Diodes Inc. DMN6040SK3-13에 대한 설명입니다.
N-Channel 60 V 40 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
Transistor: N-MOSFET; unipolar; 60V; 20A; 0.04ohm; 42W; -55+150 deg.C; SMD; TO252(DPAK); AEC-Q100
Mosfet, N-Ch, 60V, 20A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN6040SK3-13
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.287 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max40 mΩ
Rise Time8.1 ns
Schedule B8541290080
Turn-Off Delay Time20.1 ns
Turn-On Delay Time6.6 ns
Dimensions
Height2.39 mm
Length6.7 mm
Width6.2 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책