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Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiNVMFS5C404NT1G
ON SEMICONDUCTOR - NVMFS5C404NT1G - MOSFET Transistor, N Channel, 378 A, 40 V, 570 µohm, 10 V, 4 V
onsemiNTMFS5C404NLT1G
Power Field-Effect Transistor, 339A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiNVMFS5C404NLWFT1G
Single N-Channel Power MOSFET 40V, 370A, 0.67mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks
Diodes Inc.DMN4020LFDE-7
Mosfet, N-Ch, 40V, 8A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN4020LFDE-7
Diodes Inc.DMP32D4SFB-7B
Mosfet, P-Ch, 30V, 0.4A, Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP32D4SFB-7B
Diodes Inc.DMN32D2LFB4-7
Mosfet, N-Ch, 30V, 0.3A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN32D2LFB4-7
설명
유통업체에서 제공한 onsemi NTMFS5H400NLT1G에 대한 설명입니다.
Single N Channel Power MOSFET 40V, 330A, 0.8mΩ Power MOSFET 40V 330A 0.8 mOhm Single N−Channel SO-8FL Logic Level
3.3W(Ta),160W(Tc) 20V 2V@ 250¦ÌA 120nC@ 10 V 1N 40V 800¦Ì¦¸@ 50A,10V 46A,330A 7.7nF@20V SO
Trans MOSFET N-CH 40V 46A 5-Pin(4+Tab) SO-FL T/R
Power Field-Effect Transistor, 330A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)330 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.3 W
Rds On Max800 µΩ
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Dimensions
Height1.1 mm