공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-02-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiNTMFS5C423NLT1G
Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ Power MOSFET 40 V, 2.0 mΩ, 150 A, Single N−Channel
onsemiNVMFS5C423NLT1G
ON SEMICONDUCTOR NVMFS5C423NLT1G MOSFET Transistor, N Channel, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
Diodes Inc.DMN4020LFDE-7
Mosfet, N-Ch, 40V, 8A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN4020LFDE-7
Diodes Inc.DMP32D4SFB-7B
Mosfet, P-Ch, 30V, 0.4A, Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP32D4SFB-7B
Diodes Inc.DMN32D2LFB4-7
Mosfet, N-Ch, 30V, 0.3A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN32D2LFB4-7
설명
유통업체에서 제공한 onsemi NTMFS5C430NLT1G에 대한 설명입니다.
Single N−Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel
MOSFETs N-Channel VDS=40V VGS=±20V ID=200A RDS(ON)=2.2mΩ@4.5V DFN5_4.9X5.9MM
MOSFETs; NTMFS5C430NLT1G; ON SEMICONDUCTOR; 40 V; 38 A; 20 V; 3.8 W
Trans MOSFET N-CH 40V 38A 5-Pin SO-FL EP T/R
Power Field-Effect Transistor, 200A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemi NMOS, Vds=40 V, 200 A, DFN, , 5
MOSFET, N-CH, 40V, 200A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Powe
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Terminals5
Technical
Continuous Drain Current (ID)200 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.8 W
Rds On Max1.5 mΩ
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time31 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm