공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-07-27
LTD Date2013-01-27
관련 부품
InfineonBSC025N03LSGATMA1
N-Channel 30 V 2.5 mO 74 nC 36 nC Surface Mount OptiMOS Power Mosfet - TDSON-8
InfineonIRFH7932TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
NXP SemiconductorsPH3330L,115
62.5W(Tc) 20V 2.15V@1mA 30.5nC@ 4.5 V 1N 30V 3.3m¦¸@ 25A,10V 4.84nF@12V LFPAK56 1.1mm
InfineonIRFH5302DTRPBF
Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
onsemiNTMFS4898NFT1G
NTMFS4898N: Power MOSFET 30V 117A 3 mOhm Single N-Channel with Integrated Schottky SO-8FL
onsemiNTMFS4935NBT1G
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 13A Ta 93A Tc 93A 930mW Ta 48W Tc 30V
설명
유통업체에서 제공한 onsemi NTMFS4923NET3G에 대한 설명입니다.
Power MOSFET 30V 91A 3.3 mOhm Single N-Channel Thermally Enhanced SO-8FL T3 30V 20V NCH
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 12.7A Ta 91A Tc 91A 930mW 30V
Trans MOSFET N-CH 30V 38.8A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 21.4A 5-Pin(4+Tab) SO-FL T/R
Small Signal Field-Effect Transistor, 12.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 12.7A/91A 5DFN
NTMFS4923NET3G, SINGLE MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals5
Technical
Continuous Drain Current (ID)12.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.85 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation930 mW
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation2.63 W
Rds On Max3.3 mΩ
Turn-Off Delay Time27.5 ns
Turn-On Delay Time16.3 ns
Dimensions
Height1.1 mm