공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
Diodes Inc.DMG4800LK3-13
Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3
InfineonSPD30N03S2L20GBTMA1
MOSFET N-CH 30V 30A TO252-3 N-Channel 30 V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3
InfineonIPD30N03S2L20ATMA1
MOSFET N-CH 30V 30A TO252-31 N-Channel 30 V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3-11
onsemiNTD4865NT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
설명
유통업체에서 제공한 onsemi NTHS4166NT1G에 대한 설명입니다.
NTHS4166NT1G N-CHANNEL MOSFET TRANSISTOR, 8.2 A, 30 V, 8-PIN CHIPFET
NTHS4166N: Small Signal MOSFET 30V 8.2A 24 mOhm Single N-Channel ChipFET
Single N-Channel ChipFET™ Power MOSFET 30V 8.2A 24mΩ
800mW(Ta) 20V 2.3V@ 250µA 18nC@ 10 V 1individualNChannel 30V 22mΩ@ 4.9A,10V 4.9A 900pF@15V CHIPFET-8 SMD mount 3.05mm*1.65mm*1.05mm
N Channel Mosfet, 30V, 6.6A, 1206A, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:2.2W Rohs Compliant: Yes |Onsemi NTHS4166NT1G
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation2.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1.5 W
Rds On Max22 mΩ
Rise Time11 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Dimensions
Height1.1 mm
Length3.1 mm
Width1.7 mm