대체 부품
Price @ 1000
$ 12.91
$ 15.94
$ 15.94
Stock
303,429
222,313
222,313
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
TO-247-3
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
1.2 kV
1.2 kV
1.2 kV
Continuous Drain Current (ID)
60 A
60 A
60 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
25 V
25 V
25 V
Power Dissipation
348 W
348 W
348 W
Input Capacitance
-
-
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-01-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NTHL040N120SC1에 대한 설명입니다.
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.039 ohm, TO-247
Transistor MOSFET N-Channel 1200V 60A 3-Pin TO-247 Tube
Avnet Japan
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
Power Field-Effect Transistor, 60A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
1.2kV 60A 39m´Î@20V35A 348W 2.97V@10mA 12pF@800V N Channel 1.781nF@800V 106nC@-5~20V -55¡Í~+175¡Í@(Tj) TO-247 MOSFETs ROHS
SIC MOSFET, N-CH, 1.2KV, 60A, TO-247; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:348W RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247-3
Number of Terminals3
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)25 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation348 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation348 W
Turn-Off Delay Time33 ns
Turn-On Delay Time18 ns
Dimensions
Height24.75 mm