대체 부품
Price @ 1000
$ 24.226
$ 35.83
$ 35.83
Stock
106,747
124,394
124,394
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
-
TO-247
TO-247
Drain to Source Voltage (Vdss)
1.2 kV
1.2 kV
1.2 kV
Continuous Drain Current (ID)
102 A
102 A
102 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
25 V
-
-
Power Dissipation
510 W
250 W
250 W
Input Capacitance
-
-
-
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NTH4L020N120SC1에 대한 설명입니다.
Transistor MOSFET N-Channel 1200V 102A 4-Pin TO-247 Tube
Avnet Japan
SICFET N-CH 1200V 102A TO247 / N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
Power Field-Effect Transistor, 102A I(D), 1200V, 0.028ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
1.2kV 102A 20m´Î@20V60A 510W 2.7V@20mA 24pF@800V N Channel 2.943nF@800V 220nC@-5~20V -55¡Í~+175¡Í@(Tj) TO-247-4 MOSFETs ROHS
Sic Mosfet, N-Ch, 20V, 102A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:102A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:20V; Power Dissipation:510W Rohs Compliant: Yes |Onsemi NTH4L020N120SC1
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)102 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)25 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation510 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation510 W
Turn-Off Delay Time41 ns
Turn-On Delay Time21.6 ns
Dimensions
Height25.56 mm