대체 부품
Price @ 1000
$ 0.175
Stock
412,623
237,082
Authorized Distributors
0
2
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
24 V
24 V
Continuous Drain Current (ID)
85 A
85 A
Threshold Voltage
-
-
Rds On Max
5.2 mΩ
5.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.4 W
2.4 W
Input Capacitance
2.05 nF
2.05 nF
공급망
Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTD110N02R-001
Tube Through Hole N-Channel Single Mosfet Transistor 12.5A Ta 110A Tc 110A 2.88W 21ns
onsemiNTD4855N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
onsemiNTD4805N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 12.7A Ta 95A Tc 95A 2.24W 8ns
설명
유통업체에서 제공한 onsemi NTD85N02R-1G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 12A Ta 85A Tc 85A 2.4W 12ns
Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 24V 17A 3-Pin(3+Tab) IPAK Rail
MOSFETs- Power and Small Signal 24V 85A N-Channel
Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)85 A
Current Rating85 A
Drain to Source Breakdown Voltage24 V
Drain to Source Resistance5.2 mΩ
Drain to Source Voltage (Vdss)24 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.05 nF
Max Operating Temperature150 °C
Max Power Dissipation78.1 W
Min Breakdown Voltage24 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.4 W
Rds On Max5.2 mΩ
Rise Time77 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)24 V