대체 부품
Price @ 1000
$ 0.574
$ 0.537
$ 0.537
Stock
8,415,251
538,861
538,861
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vds)
60 V
-60 V
-60 V
Continuous Drain Current (ID)
12 A
12 A
12 A
Threshold Voltage
-2.8 V
-
-
Rds On Max
180 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
55 W
55 W
55 W
Input Capacitance
750 pF
-
-
공급망
Country of OriginMainland China, Malaysia, Vietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NTD2955T4G에 대한 설명입니다.
Single P-Channel 60 V 0.18 Ohm 30 nC 55 W Silicon SMT Mosfet - TO-252-3
Single P-Channel Power MOSFET -60V, -12A, 180mΩ
Power MOSFET, P Channel, 60 V, 12 mA, 0.18 ohm, TO-252 (DPAK), Surface Mount
NTD2955T4G P-CHANNEL MOSFET TRANSISTOR, 12 A, 60 V, 3-PIN DPAK
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 60V 12A DPAK
MOSFET-Power, P-Channel, DPAK Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P CHANNEL MOSFET, -60V, 12A, D-PAK, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: 12mA; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 180mohm; Rds(on) Test Voltage Vgs: -10
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -12 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 180 / Gate-Source Voltage V = 20 / Fall Time ns = 90 / Rise Time ns = 85 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 55
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance750 pF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-2.8 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation55 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time45 ns
Schedule B8541290080
Threshold Voltage-2.8 V
Turn-Off Delay Time26 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-60 V
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책