가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | NTD12N10-1G | 75 | 16h | |||||||||
| Microchip USA | NTD12N10-1G | 118 | 3500 | Tray | 10h | |||||||
| Win Source | WS-NTD12N10-1G | 1,220 | 530 | 17h | ||||||||
| Worldway Electronics | NTD12N10-1G | 28,527 | 7 | Tube | 16h | |||||||
| Aztech | NTD12N10-1G | 9,416 | 12h |
공급망
Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
InfineonIRFU5410PBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
InfineonIRLU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
InfineonIRFU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
설명
유통업체에서 제공한 onsemi NTD12N10-1G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 12A Ta 12A 56.6W 32ns
NTD12N10: Power MOSFET 100V 12A 165 mOhm Single N-Channel IPAK
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) IPAK Rail
MOSFETs- Power and Small Signal 100V 12A N-Channel
Power Field-Effect Transistor, 12A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:56.6W ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance550 pF
Max Operating Temperature175 °C
Max Power Dissipation56.6 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation56.6 W
Rds On Max165 mΩ
Rise Time30 ns
Turn-Off Delay Time22 ns
Voltage Rating (DC)100 V