Infineon IRFU120NPBF

Name: Infineon IRFU120NPBF
Brand: Infineon
SKU: IRFU120NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.21 Ohm; Id 9.4A; I-pak (TO-251AA); Pd 48W

$ 0.368

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

비공인 딜러

모든 가격 할인 보기

Distributor		SKU		Min	Pkg
Newark		IRFU120NPBF	5,014	1		0.303	0.303	0.303	0.303	0.303
Arrow Electronics		IRFU120NPBF	35,212	1		0.216	0.216	0.216	0.216	0.216
Rochester Electronics	2	IRFU120NPBF	54,635					0.402	0.334	0.298	20h
DigiKey		IRFU120NPBF-ND	222	1	Tube	1.320	1.320	0.577	0.515	0.515
RS (Formerly Allied Electronics)		IRFU120NPBF	0	1	Bulk	1.230	1.110	1.110	1.110	1.110	12h

재고 내역

3개월 추세: +8.62%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

대체 부품

0개의 부품을 구매할 수 있습니다

데이터시트 및 문서

Infineon IRFU120NPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Newark

Datasheet11 페이지21년 전

Datasheet12 페이지21년 전

IHS

DigiKey

RS (Formerly Allied Electronics)

iiiC

재고 내역

3개월간의 트렌드:

+8.62%

CAD 모델

신뢰할 수 있는 파트너로부터 Infineon IRFU120NPBF 심벌, 풋프린트 및 3D STEP 모델을 다운로드하세요.

소스	이캐드	엠캐드	파일
Component Search Engine	심벌풋프린트	3D	다운로드
EE Concierge	심벌풋프린트

캐드 모델 다운로드 시 새 탭으로 파트너 사이트가 열립니다.

Octopart의 CAD를 다운로드함으로써 , Octopart의 이용약관 및 개인정보 보호정책에 동의하는 것으로 간주됩니다.

공급망

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2012-08-25

LTD Date2013-02-25

설명

유통업체에서 제공한 Infineon IRFU120NPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W

RS (Formerly Allied Electronics)

Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

Distrelec

MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC