가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 488-NTB004N10GCT-ND | 1 | 1 | Cut Tape | ||||||||
| Arrow Electronics | NTB004N10G | 262 | 1 | |||||||||
| Verical | NTB004N10G | 262 | 2 | |||||||||
| Newark | NTB004N10G | 0 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | NTB004N10G | 0 | 200 | Bulk |
대체 부품
Price @ 1000
$ 4.04
$ 1.544
$ 1.544
Stock
198,631
276,453
276,453
Authorized Distributors
6
3
3
Mount
-
Surface Mount
Surface Mount
Case/Package
-
TO-263
TO-263
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
201 A
200 A
200 A
Threshold Voltage
-
-
-
Rds On Max
-
3.4 mΩ
3.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
340 W
-
-
Input Capacitance
-
7.93 nF
7.93 nF
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NTB004N10G에 대한 설명입니다.
Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK
Transistor MOSFET N-Channel 100V 201A 3-Pin D2PAK T/R
Avnet Japan
MOSFET MV5 SOAFET 4.2MOHM 100V N-FET D2PAK
Mosfet, N-Ch, 100V, 201A, To-263 Rohs Compliant: Yes |Onsemi NTB004N10G
Power Field-Effect Transistor, 201A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)201 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation340 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation340 W
Schedule B8541290080
Turn-Off Delay Time84.7 ns
Turn-On Delay Time43 ns
Dimensions
Height5.08 mm