공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-12-24
LTD Date2021-12-24
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
설명
유통업체에서 제공한 onsemi NDT451AN에 대한 설명입니다.
N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 3W
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-223-4
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)7.2 A
Current Rating7.1 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance720 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time29 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)30 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책