가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN3032LE-13 | 4,619 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DMN3032LE-13 | 525,000 | 1037 | |||||||||
| DigiKey | DMN3032LE-13DICT-ND | 95,515 | 1 | Cut Tape | ||||||||
| TME | DMN3032LE-13 | 666 | 1 | 17h | ||||||||
| RS (Formerly Allied Electronics) | DMN3032LE-13 | 0 | 20 | Bulk | 10h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-03-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRLL3303TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
Diodes Inc.ZXMP6A17GTA
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
설명
유통업체에서 제공한 Diodes Inc. DMN3032LE-13에 대한 설명입니다.
N-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
Trans MOSFET N-CH 30V 5.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
Mosfet, N-Ch, 30V, 15.4A, Sot-223 Rohs Compliant: Yes |Diodes Inc. DMN3032LE-13
MOSFET N-Ch 30V 5.6A Enhanc. SOT223
MOSFETs 30V 6.50 x 3.50mm SMT SOT223 5.6A N-Channel
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
DiodesZetex NMOS, Vds=30 V, 15.4 A, SOT-223, , 3
MOSFET, N-CH, 30V, 15.4A, SOT-223;
MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC
Power Field-Effect Transistor, 5.6A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time1.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance498 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max29 mΩ
Rise Time3.9 ns
Schedule B8541290080
Turn-Off Delay Time10 ns
Turn-On Delay Time2.3 ns
Dimensions
Height1.65 mm
Length6.55 mm
Width3.55 mm