공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonBSP320SH6327XTSA1
Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223
InfineonIRLL024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V
InfineonIRLL024NPBF
Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223
설명
유통업체에서 제공한 onsemi NDT2955에 대한 설명입니다.
Transistor MOSFET P-Channel 60V 2.5A 3W (Ta) Surface Mount SOT-223-4
Transistor: P-MOSFET; unipolar; -60V; -2.5A; 0.3ohm; 3W; -55+150 deg.C; SMD; SOT223
P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ
Single P-Channel 60 V 3 W 15 nC Silicon Surface Mount Mosfet - SOT-223
Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount
This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.
MOSFET, P-CH, 60V, 2.5A, SOT-223, RL; Transistor Polarity: P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.095ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.5 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.1
MOSFET, P CH, 60V, 2.5A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:2.6V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:15A; SMD Marking:2955; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-2.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-4V
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기술 사양
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight250.2 mg
Technical
Continuous Drain Current (ID)2.5 A
Current Rating-2.5 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance601 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-2.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max300 mΩ
Resistance300 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage2.6 V
Turn-Off Delay Time19 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.8 mm
Length6.5 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책