onsemi NDS8934

Transistor MOSFET Array Dual P-Channel 20V 3.8A 8-Pin SOIC N T/R
$ 0.678
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi NDS8934에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet7 페이지28년 전
Datasheet0 페이지0년 전

Fairchild Semiconductor

iiiC

재고 내역

3개월간의 트렌드:
Restocked

공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

관련 부품

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Transistor MOSFET Array Dual P-Channel 20V 4.7A 8-Pin DSO
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Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 4A -4A 900mW 90ns
InfineonIRF7307PBF
Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
InfineonIRF7307TRPBF
Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
onsemiFDS9933A
Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.8A, 75mΩ
Trans MOSFET P-CH 20V 3.86A 8-Pin SOIC N T/R

설명

유통업체에서 제공한 onsemi NDS8934에 대한 설명입니다.

Transistor MOSFET Array Dual P-Channel 20V 3.8A 8-Pin SOIC N T/R
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 30nC @ 4.5V 3.8A 900mW 30ns
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs Dual P-Ch FET Enhancement Mode
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

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