공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-03-01
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
관련 부품
onsemiNTMSD3P102R2SG
2W 20V 1individualPChannel 20V 85mΩ 3.86A SOIC-8 SMD mount，glue mount 5mm*4mm*1.5mm
설명
유통업체에서 제공한 onsemi NDS8934에 대한 설명입니다.
Transistor MOSFET Array Dual P-Channel 20V 3.8A 8-Pin SOIC N T/R
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 30nC @ 4.5V 3.8A 900mW 30ns
Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
2W 8V 1V@ 250µA 30nC@ 4.5V 2individualPChannel 20V 70mΩ@ 3.8A,4.5V 3.8A 1.12nF@10V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm
MOSFETs Dual P-Ch FET Enhancement Mode
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)3.8 A
Current Rating-3.8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time30 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.12 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2 W
Rds On Max70 mΩ
Rise Time53 ns
Turn-Off Delay Time60 ns
Voltage Rating (DC)-20 V