공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-09-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-04-30
LTD Date2014-10-31
관련 부품
설명
유통업체에서 제공한 Infineon BSO211P에 대한 설명입니다.
Transistor MOSFET Array Dual P-Channel 20V 4.7A 8-Pin DSO
4.7 A 20 V 0.067 ohm 2 CHANNEL P-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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- Infineon Technologies
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- INFINEO
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- INFI
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.7 A
Current Rating-4.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance67 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time23.3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance920 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel
Power Dissipation2 W
Rds On Max67 mΩ
Rise Time10.6 ns
Turn-Off Delay Time26.3 ns
Turn-On Delay Time7.8 ns
Voltage Rating (DC)-20 V