공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonBSS138NH6327XTSA2
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
설명
유통업체에서 제공한 onsemi NDS0605에 대한 설명입니다.
P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω
P-Channel 60 V 5 Ohm Surface Mount Field Effect Transistor - SOT-23
Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
This P-Channel enhancement mode power field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)180 mA
Current Rating-180 mA
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time6.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance79 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max5 Ω
Resistance5 Ω
Rise Time6.3 ns
Schedule B8541210080
Threshold Voltage-1.7 V
Turn-Off Delay Time10 ns
Turn-On Delay Time2.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.11 mm
Length2.92 mm
Width3.05 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책